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| HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Features Noise Figure: 3.8 dB P1dB: +12 dBm Gain: 21 dB Supply Voltage: +2.5V 50 Ohm Matched Input/Output Die Size: 1.55 x 0.73 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH382 is ideal for: * Short Haul / High Capacity Links * Wireless LANs * Military & Space Functional Diagram General Description The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/ Au metallized and the amplifier device is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25 C, Vdd = 2.5V, Idd = 64 mA* Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) *Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd total = 64 mA 19 Min. Typ. 57 - 65 21 4 12 10 12 64 100 5.5 Max. Units GHz dB dB dB dB dBm mA 1 - 174 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Linear Gain vs. Frequency 30 25 20 GAIN (dB) 15 10 5 0 57 59 61 FREQUENCY (GHz) 63 65 Noise Figure vs. Frequency 6 5 NOISE FIGURE (dB) 4 3 2 1 0 57 59 61 FREQUENCY (GHz) 63 65 1 LOW NOISE AMPLIFIERS - CHIP 1 - 175 Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 RETURN LOSS (dB) -10 RETURN LOSS (dB) 57 59 61 FREQUENCY (GHz) 63 65 -5 -5 -10 -15 -15 -20 -20 57 59 61 FREQUENCY (GHz) 63 65 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz 1 LOW NOISE AMPLIFIERS - CHIP Wideband Linear Gain Wideband Input Return Loss Wideband Output Return Loss 1 - 176 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Absolute Maximum Ratings Drain Bias Voltage Gate Bias Voltage RF Input Power Storage Temperature Operating Temperature +5.5 Vdc -1 to +0.3 Vdc -5 dBm -65 to +150 C -55 to +85 C 1 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard WP - 8 Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002" [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 177 LOW NOISE AMPLIFIERS - CHIP HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz 1 LOW NOISE AMPLIFIERS - CHIP Pad Descriptions Pad Number 1 2 Function RFIN RFOUT Description This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. Interface Schematic 3 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 4 Vgg Gate control for amplifier. Please follow "MMIC Amplifier Biasing Procedure" application note. See assembly for required external components. Die bottom GND Die bottom must be connected to RF/DC ground. 1 - 178 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH382 v01.0108 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Assembly Diagram 1 LOW NOISE AMPLIFIERS - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 179 |
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